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| inchange semiconductor product specification silicon npn power transistors 2n6576 2N6577 2n6578 description ? with to-3 package ? darlington ? high dc current gain applications ? power switching ? audio amplifiers ? hammer drivers ? series and shunt regulators pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit 2n6576 60 2N6577 90 v cbo collector-base voltage 2n6578 open emitter 120 v 2n6576 60 2N6577 90 v ceo collector-emitter voltage 2n6578 open base 120 v v ebo emitter-base voltage open collector 7 v i c collector current 15 a i cm collector current-peak 30 a i b base current 0.25 a p d total power dissipation t c =25 ?? 120 w t j junction temperature 200 ?? t stg storage temperature -65~200 ?? fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2n6576 2N6577 2n6578 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2n6576 60 2N6577 90 v ceo(sus) collector-emitter sustaining voltage 2n6578 i c =0.2a ;i b =0 120 v v cesat-1 collector-emitter saturation voltage i c =10a; i b =100ma 2.8 v v cesat-2 collector-emitter saturation voltage i c =15a ;i b =150ma 4.0 v v be sat-1 base-emitter saturation voltage i c =10a; i b =100ma 3.5 v v be sat-2 base-emitter saturation voltage i c =15a ;i b =150ma 4.5 v 2n6576 v ce =60v; i b =0 2N6577 v ce =90v; i b =0 i ceo collector cut-off current 2n6578 v ce =120v; i b =0 1.0 ma 2n6576 v cb =60v; i e =0 2N6577 v cb =90v; i e =0 i cbo collector cut-off current 2n6578 v cb =120v; i e =0 0.5 ma i ebo emitter cut-off current v eb =7v; i c =0 7.5 ma h fe-1 dc current gain i c =0.4a ; v ce =3v 200 h fe-2 dc current gain i c =4a ; v ce =3v 2000 20000 h fe-3 dc current gain i c =10a ; v ce =3v 500 5000 h fe-4 dc current gain i c =15a ; v ce =4v 100 v f diode forward voltage i f =15a 4.5 a thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.46 ?? /w inchange semiconductor product specification 3 silicon npn power transistors 2n6576 2N6577 2n6578 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10mm) |
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